This resulted within a decreased work perform plus the development of a Schottky Make contact with among the BrGO and n-sort Si substrate. Resulting from the upper proportion of B-C and B-C3 bonding inside the BrGO/Si device than that from the rGO/Si, the diminished Schottky barrier top of the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/